FDMC86248 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max RDS(on) = 90 mW at VGS = 10 V, ID = 3.4 A
* Max RDS(on) = 125 mW at VGS = 6 V, ID = 2.9 A
* Advanced Package and Silicon Combination for Low RDS(on) and.

Application

* Primary MOSFET
* MV Synchronous Rectifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parame.

Description

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features
* Max RDS(on) = 90 mW at VGS = 10 V, ID .

Image gallery